cmrdm3575 surface mount n-channel and p-channel enhancement-mode complementary silicon mosfets description: the central semiconductor cmrdm3575 consists of complementary n-channel and p-channel enhancement-mode silicon mosfets designed for high speed pulsed amplifier and driver applications. these mosfets offer low r ds(on) and low threshold voltage. marking code: ct applications: ? load/power switches ? power supply converter circuits ? battery powered portable devices features: ? power dissipation: 125mw ? low package profile: 0.5mm (max) ? low r ds(on) ? low threshold voltage ? logic level compatible ? small sot-963 surface mount package maximum ratings: (t a =25c) symbol n-ch (q1) p-ch (q2) units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 160 140 ma continuous drain current, t p < 5.0s i d 200 180 ma power dissipation p d 125 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 1000 c/w electrical characteristics: (t a =25c) n-ch (q1) p-ch (q2) symbol test conditions min typ max min typ max units i gssf , i gssr v gs =5.0v, v ds =0 - - 100 - - 100 na i dss v ds =5.0v, v gs =0 - - 50 - - 50 na i dss v ds =16v, v gs =0 - - 100 - - 100 na bv dss v gs =0, i d =250a 20 - - 20 - - v v gs(th) v ds =v gs, i d =250a 0.4 - 1.0 0.4 - 1.0 v r ds(on) v gs =4.5v, i d =100ma - 1.5 3.0 - 4.0 5.0 r ds(on) v gs =2.5v, i d =50ma - 2.0 4.0 - 5.5 7.0 r ds(on) v gs =1.8v, i d =20ma - 3.0 6.0 - 8.0 10 r ds(on) v gs =1.5v, i d =10ma - 4.0 10 - 11 17 r ds(on) v gs =1.2v, i d =1.0ma - 7.0 - - 20 - q g(tot) v ds =10v, v gs =4.5v, i d =100ma - 0.458 - - 0.536 - nc q gs v ds =10v, v gs =4.5v, i d =100ma - 0.176 - - 0.292 - nc q gd v ds =10v, v gs =4.5v, i d =100ma - 0.138 - - 0.236 - nc g fs v ds =5.0v, i d =125ma - 1.3 - - 1.3 - s c rss v ds =15v, v gs =0, f=1.0mhz - 2.2 - - 1.0 - pf c iss v ds =15v, v gs =0, f=1.0mhz - 9.0 - - 12 - pf c oss v ds =15v, v gs =0, f=1.0mhz - 3.0 - - 2.7 - pf t on v dd =10v, v gs =4.5v, i d =200ma - 40 - - 60 - ns t off v dd =10v, v gs =4.5v, i d =200ma - 150 - - 210 - ns sot-963 case r2 (2-august 2011) www.centralsemi.com ? device is halogen free by design
cmrdm3575 surface mount n-channel and p-channel enhancement-mode complementary silicon mosfets sot-963 case - mechanical outline lead code: 1) source q1 2) gate q1 3) drain q2 4) source q2 5) gate q2 6) drain q1 marking code: ct pin configuration www.centralsemi.com r2 (2-august 2011)
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